Nitronex Awarded Phase II STTR Grant To Further Enhance GaN-On-Silicon HEMTs For High-Frequency Applications
Nitronex Awarded Phase II STTR Grant To Further Enhance GaN-On-Silicon HEMTs For High-Frequency Applications
DURHAM, N.C. (August 11, 2008) - Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for wireless infrastructure, broadband, and military markets, has received Phase II Small Business Technology Transfer (STTR) funding to further develop its GaN technology for military and aerospace applications. The two year Phase II STTR program began in the first quarter of this year. The primary program objective is to deliver high power X-band GaN monolithic microwave integrated circuits (MMICs) that address Ballistic Missile Defense radar needs of the Missile Defense Agency (MDA).
"We are excited to be working with the MDA to advance our GaN-on-Silicon HEMT and MMIC manufacturing infrastructure and to broaden the operating frequency range of our RF power discrete devices and MMICs for both commercial and military applications," said Edwin Piner, Director of Advanced Technology. "The program's high power X-band Gallium Nitride on Silicon MMICs will enable X-band radar with increased performance capability, reduced size, weight and power consumption (SWAP) while simultaneously leveraging the inherent affordability and reliability of our technology."
For more information about Nitronex's GaN-on-Silicon power amplifiers, contact Nitronex at 2305 Presidential Drive, Durham, NC 27703; call 919-807-9100; or e-mail info@nitronex.com.
About Nitronex
Specializing in the development and manufacturing of gallium nitride (GaN) RF power devices, Nitronex is the global leader in high-performance GaN on silicon (GaN-on-Si) RF power transistors for the commercial wireless infrastructure, broadband and military markets. Based on its patented SIGANTIC(r) process -- gallium nitride on silicon technology -- Nitronex is at the forefront of commercializing GaN technology for RF applications. The company's ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.
Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending.
